• Laser Type: Diode Laser

• Wavelength: 980nm (Near Infrared)

• Output Power: 2,000W

• Homogenizer beam size: 9x9~46x46mm

• Gantry Type / Resolution: Belt flow (XY axis moving )/ 1um

• Beam uniformity within effective beam area: >80%

• Beam center position accuracy: ±300um

• Beam steepness width: Within 1.5mm

• Flatness of stage: Bonding stage ≤ 25um

• Stage Temperature: Max. 150±5 ℃ (Pre heat, Bond zone)

• Working zone : Substrate/ Jig (Boat) Size: 

* Single Lane : L: 330mm, W: 62 ~ 330mm, Up to 12” wafer

* Dual Lanes : L: 330mm, W: 62 ~ 160mm

* Substrate Thickness : 0.3 ~ 4.5mm

• Monitoring System: Laser Power/ IR Camera (Reference only)

• Laser warranty: 5 years on diode laser elements, 2 years on laser system 

• Vision system: 5.3um Resolution, 14.4x10.8mm FOV, coaxial & ring light

• Machine Foot Print (W x L x H): 1,500 x 1,500 x 1,900